1/9 june 2005 STL20NM20N n-channel 200v - 0.088 ? - 20a powerflat? ultra low gate charge mdmesh? ii mosfet table 1: general features worldwide lowest gate charge typical r ds (on) = 0.088 ? improved die-to-footprint ratio very low profile package (1mm max) very low thermal resistance low gate resistance low input capacitance high dv/dt and avalanche capabilities description this 200v mosfet with a new advanced layout brings all unique advantages of mdmesh technol- ogy to lower voltages. the device exhibits world- wide lowest gate charge for any given on- resistance.its use is therefore ideal as primary switch in isolated dc-dc converters for telecom and computer applications.used in combination with secondary-side low-voltage stripfet tm prod- ucts, it contributes to reducing losses and boosting efficiency.the new powerflat? package allows a significant reduction in board space without com- promising performance. applications the mdmesh tm family is very suitable for increas- ing power density allowing system miniaturization and higher efficiencies table 2: order codes figure 1: package figure 2: internal schematic diagram type v dss r ds(on) i d STL20NM20N 200 v < 0.105 ? 20 a powerflat (6x5) (chip scale package) sales type marking package packaging STL20NM20N l20nm20n powerflat?(6x5) tape & reel rev. 3
STL20NM20N 2/9 table 3: absolute maximum ratings table 4: thermal data table 5: avalanche characteristics electrical characteristics (t case =25c unless otherwise specified) table 6: on/off symbol parameter value unit v ds drain-source voltage (v gs = 0) 200 v v dgr drain-gate voltage (r gs = 20 k ? ) 200 v v gs gate- source voltage 30 v i d (1) drain current (continuous) at t c = 25c (steady state) drain current (continuous) at t c = 100c 20 12.3 a a i dm (3) drain current (pulsed) 80 a p tot (2) total dissipation at t c = 25c (steady state) 2.5 w p tot (1) total dissipation at t c = 25c (steady state) 80 w derating factor (2) 0.02 w/c dv/dt (4) peak diode recovery voltage slope 10 v/ns symbol parameter typ. max. unit rthj-c thermal resistance junction-case 1.56 c/w rthj-pcb (2) thermal resistance junction-pcb 35 50 c/w t j t stg max. operating junction temperature storage temperature -55 to 150 c symbol parameter max. value unit i as avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 20 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 35 v) 380 mj symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 200 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c = 125 c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 30 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 34 5v r ds(on) static drain-source on resistance v gs = 10v, i d = 10 a 0.088 0.105 ?
3/9 STL20NM20N electrical characteristics (continued) table 7: dynamic (*) c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss table 8: source drain diode note: 1. the value is rated according to r thj-c . 2. when mounted on fr-4 board of 1inch 2 , 2 oz cu 3. pulse width limited by safe operating area 4. i sd 20a, di/dt 400a/s, v dd v (br)dss 5. pulsed: pulse duration = 300 s, duty cycle 1.5 % symbol parameter test conditions min. typ. max. unit g fs ( 5 ) forward transconductance v ds = 15 v , i d = 10 a 8 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v, f = 1 mhz, v gs = 0 800 330 130 pf pf pf c oss eq. (*) equivalent output capacitance v gs = 0v, v ds = 0v to 160 v 225 pf t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 100 v, i d = 10 a r g =4.7 ? v gs = 10 v (see figure 16) 40 15 40 11 ns ns ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 160 v, i d = 20 a, v gs = 10 v (see figure 19) 32 6 25 50 nc nc nc symbol parameter test conditions min. typ. max. unit i sd source-drain current 20 a i sdm (3) source-drain current (pulsed) 80 a v sd (5) forward on voltage i sd = 20 a, v gs = 0 1.3 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 20 a, di/dt = 100 a/s, v dd = 100 v, t j = 25c (see figure 17) 160 960 128 ns nc a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 20 a, di/dt = 100 a/s, v dd = 100 v, t j = 150c (see figure 17) 225 1642 15 ns nc a
STL20NM20N 4/9 figure 3: safe operating area figure 4: output characteristics figure 5: transconductance figure 6: thermal impedance figure 7: transfer characteristics figure 8: static drain-source on resistance
5/9 STL20NM20N figure 9: gate charge vs gate-source voltage figure 10: normalized gate thereshold volt- age vs temperature figure 11: source-drain diode forward char- acteristics figure 12: capacitance variations figure 13: normalized on resistance vs tem- perature figure 14: normalized bvdss vs temperature
STL20NM20N 6/9 figure 15: unclamped inductive load test cir- cuit figure 16: switching times test circuit for resistive load figure 17: test circuit for inductive load switching and diode recovery times figure 18: unclamped inductive wafeform figure 19: gate charge test circuit
7/9 STL20NM20N information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is a registered trademark of stmicroelectronics all other names are the property of their respective owners ? 2005 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com dim. mm. inch min. typ max. min. typ. max. a 0.80 0.93 0.031 0.036 a1 0.02 0.0007 0.0019 a3 0.20 0.007 b 0.35 0.47 0.013 0.018 d 5.00 0.196 d1 4.75 0.187 d2 4.15 4.25 0.163 0.167 e 6.00 0.236 e1 5.75 0.226 e2 3.43 3.53 0.135 0.139 e4 2.85 2.68 0.101 0.105 e 1.27 0.050 l 0.70 0.90 0.027 0.035 powerflat? (6x5) mechanical data
STL20NM20N 8/9 table 9: revision history date revision description of changes 16-feb-2005 2 new stylesheet some values changed on table 6 and 8 09-jun-2005 3 inserted curves
9/9 STL20NM20N information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is a registered trademark of stmicroelectronics all other names are the property of their respective owners ? 2005 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com
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